cindydaniel
希望能帮到你：Power semiconductor devices and power electronics World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics. According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only. At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society. The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices. The development of power semiconductor devices in three stages The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.
lucaminiya
Outline of power semiconductor devices With above those of the general concept of development, to introduce the following power semiconductor devices included in the content. Figure III gives the general picture of power semiconductor devices. It can be divided into three parts, namely, bipolar devices traditional power semiconductor devices, MOSFET and the IC in a modern power semiconductor devices, and the first developed on the basis of two large power devices. This article focuses on modern power semiconductor devices in this part of the changes in these elements is very fast. First of all, from the MOS-type devices, it has been to the two directions: A) the traditional direction of power semiconductors, that is, I hope the device will have a higher voltage, but there is still a lower internal resistance or pressure drop. The most typical, such as insulated gate bipolar transistors IGBT, its structure and the MOSFET is very similar. It has insulated gate MOS devices and the ability to quickly switch. But its power rating is the same as in the thyristor. So was the original staff do appreciate the power of electronic technology for power semiconductor devices of the new platform. From the IGBT chip, the speed of replacement soon, as the fifth-generation IR FZ silicon material used in the structure of non-penetrating (NPT), because of their greater durability (ruggedness) and is conducive to high - industrial applications. On this basis the past few years and the termination of the development of the field (Field Stop) structure could be further thinning IGBT chips, such as 1200 volts as long as the use of the FS IGBT silicon thickness of 120 microns, thereby further reducing the pressure drop and dynamic losses. IGBT in fact there are three directions, 1) make plastic devices, it has been used extensively for the development of home appliances. 2) make module form, or together with the protection circuit, trigger circuit into intelligent power module (IPM), which used a lot in the air-conditioning equipment. In recent years, IR is the development of a series of modules called iNTERO. As shown in Figure IV. The so-called intero, in Italian, which is equivalent to the English in the entire, that is, the meaning of all. It contains a set from a simple to more complex range of modules. Only power devices, such as from the main circuit of the power module integrated PIM / BBI (Power Integrated Module / Bridge, Brake, Inverter) started the development of the Intelligent Power Module IPM, to I2PM (the inner surface of insulation Intelligent Power Module), has been to up-to-date program-controlled intelligent power module insulation PI-IPM (Programmable Isolated-IPM). In the PI-IPM is divided into two types, that is written into the software or the software has not yet been written into the two. Another is the development of a Simple direct plug-in modules, known as "Plug & Drive", can be used in smaller air-conditioning and other power appliances. 3) In regard to extraordinary power, IGBT has become an important member of one, for example, to achieve 6500 V IGBT, can be used to replace the traditional GTO. In this regard, a number of European and Japanese companies have a larger development. Add: In the direction of higher pressure, MOSFET is also made many improvements. For example, the structure of super-node. It broke through the limits of the traditional MOSFET theory, the prospect of moving display. B) MOSFET more dominant direction is the direction to the development of very low internal resistance. The most typical is the application of the computer. Figure 5 shows the resistance (RxA) and its excellent value switch (RxQswitch) trend of rapid improvement in performance. To achieve this performance, it requires more from each MOSFET of the MOSFET small-cell component. This requires the process to sub-micron precision direction.我自己翻译的。呵呵 。你看着怎么样。
小丸子新
翻译： Power semiconductor devices and power electronics World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics. According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only. At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society. The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices. The development of power semiconductor devices in three stages The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely. 一般来说是这样的
